DRY-ETCHED WIRE DISTRIBUTED-FEEDBACK LASER

Citation
Ua. Griesinger et al., DRY-ETCHED WIRE DISTRIBUTED-FEEDBACK LASER, IEEE photonics technology letters, 7(9), 1995, pp. 953-955
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
7
Issue
9
Year of publication
1995
Pages
953 - 955
Database
ISI
SICI code
1041-1135(1995)7:9<953:DWDL>2.0.ZU;2-G
Abstract
We report on the realization and the properties of dry-etched wire and wire-DFB lasers and compare them with two-dimensional (2-D) reference lasers, The starting vertical structure, which was optimized for low threshold, consists of four GaInAs quantum wells embedded in a GaInAsP waveguide, Even for very small longitudinal confinement factors of th e order 0.23, the dry-etched wire lasers show laser operation up to 60 degrees C and a threshold current density at room temperature of 5 kA /cm(2) for simple oxide stripe lasers, For the wire lasers, an increas e of the differential material gain of more than one order of magnitud e (about a factor of 20) was measured, compared to conventional 2-D la sers. The wires were also arranged periodically with different grating constants to allow gain-coupled DFB laser operation. Clear single-mod e emission has been found, as expected, from the gain-coupling mechani sm.