We report on the realization and the properties of dry-etched wire and
wire-DFB lasers and compare them with two-dimensional (2-D) reference
lasers, The starting vertical structure, which was optimized for low
threshold, consists of four GaInAs quantum wells embedded in a GaInAsP
waveguide, Even for very small longitudinal confinement factors of th
e order 0.23, the dry-etched wire lasers show laser operation up to 60
degrees C and a threshold current density at room temperature of 5 kA
/cm(2) for simple oxide stripe lasers, For the wire lasers, an increas
e of the differential material gain of more than one order of magnitud
e (about a factor of 20) was measured, compared to conventional 2-D la
sers. The wires were also arranged periodically with different grating
constants to allow gain-coupled DFB laser operation. Clear single-mod
e emission has been found, as expected, from the gain-coupling mechani
sm.