ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY

Accurate and reproducible molecular beam epitaxial (MBE) growths of ve rtical cavity surface-emitting lasers (VCSEL's) and various vertical-c avity structures are achieved using an extremely simple, cost-effectiv e and compact diode laser reflectometry pre-growth calibration system, Average growth accuracy of 0.25% with a 0.40% standard deviation is o btained over a period of 6 months for a variety of growth structures, Low threshold continuous wave room temperature operation is achieved f rom all the VCSEL wafers.