Gs. Li et al., ACCURATE MOLECULAR-BEAM EPITAXIAL-GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER USING DIODE-LASER REFLECTOMETRY, IEEE photonics technology letters, 7(9), 1995, pp. 971-973
Accurate and reproducible molecular beam epitaxial (MBE) growths of ve
rtical cavity surface-emitting lasers (VCSEL's) and various vertical-c
avity structures are achieved using an extremely simple, cost-effectiv
e and compact diode laser reflectometry pre-growth calibration system,
Average growth accuracy of 0.25% with a 0.40% standard deviation is o
btained over a period of 6 months for a variety of growth structures,
Low threshold continuous wave room temperature operation is achieved f
rom all the VCSEL wafers.