STRONGLY IMPROVED FREQUENCY-RESPONSE AT HIGH-OPTICAL INPUT POWERS FROM INGAASP COMPENSATED STRAIN MQW ELECTROABSORPTION MODULATORS

InGaAsP MQW electroabsorption modulators with and without compensated strain were fabricated and tested, Compensated strain was employed to reduce the valence band discontinuity between the wed acid barrier, wh ich decreased the heavy-hole carrier escape time, A short optical puls e coupled into the modulator was used to measure the enhancement in ca rrier escape time from strained compensated InGaAsP quantum wells, for the first time, As a result, the strained MQW sample demonstrated an improved frequency response when operated at high optical input powers and low fields.