MONTE-CARLO SIMULATION OF THE RAPID CRYSTALLIZATION OF BISMUTH-DOPED SILICON

In this Letter we report Ising model simulations of the growth of allo ys which predict quite different behavior near and far from equilibriu m. Our simulations reproduce the phenomenon which has been termed ''so lute trapping,'' where concentrations of solute, which are far in exce ss of the equilibrium concentrations, are observed in the crystal afte r rapid crystallization. This phenomenon plays an important role in ma ny processes which involve first order phase changes which take place under conditions far from equilibrium. The underlying physical basis f or it has not been understood, but these Monte Carlo simulations provi de a powerful means for investigating it.