ALUMINUM GETTERING IN SILICON-WAFERS

Authors
MARTINUZZI S PORRE O PERICHAUD I PASQUINELLI M
Citation
S. Martinuzzi et al., ALUMINUM GETTERING IN SILICON-WAFERS, Journal de physique. III, 5(9), 1995, pp. 1337-1343
Citations number
11
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
5
Issue
9
Year of publication
1995
Pages
1337 - 1343
Database
ISI
SICI code
1155-4320(1995)5:9<1337:AGIS>2.0.ZU;2-#
Abstract
The effect of an evaporated thick aluminium paper on electrical proper ties of multicrystalline and gold contaminated FZ monocrystalline sili con wafers was investigated. By means of minority carrier diffusion le ngth measurements and Deep Level Transient Spectroscopy, it was deduce d that the material improvements observed after annealing at 900 degre es C are due to gettering of metallic impurities in the Al-Si alloyed layer.