PROPERTIES OF DISLOCATIONS IN HGCDTE CRYSTALS

Authors
RENAULT PO BARBOT JF GIRAULT P DECLEMY A RIVAUD G BLANCHARD C
Citation
Po. Renault et al., PROPERTIES OF DISLOCATIONS IN HGCDTE CRYSTALS, Journal de physique. III, 5(9), 1995, pp. 1383-1389
Citations number
21
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
5
Issue
9
Year of publication
1995
Pages
1383 - 1389
Database
ISI
SICI code
1155-4320(1995)5:9<1383:PODIHC>2.0.ZU;2-5
Abstract
Dislocations in Hg-1-x CdxTe (x: approximate to 0.2) single crystals h ave been introduced either by plastic deformation or by Al-implantatio n at high dose. Structural analysis of implanted samples, using Huang' s method shows that dislocation loops are mainly of interstitial type with a radius of about 2.6 nm. Electrical properties of uniaxially def ormed samples, using Hall effect, indicate the presence of both accept or-like type dislocations along with donor-type point defects.