X-RAY STUDY OF THE AG SI(III) INTERFACE

X-ray diffraction was employed to study the structure of the Ag/Si(111 ) interface. Samples were prepared by vacuum deposition of Ag onto Si( 111)-(7 x 7) followed by either annealing to 400 degrees C or no annea l. The annealed and unannealed samples show significantly different Si -substrate truncation-rod intensity profiles. The results are explaine d in terms of structural features of the (7 x 7) reconstruction for th e unannealed sample and a fairly abrupt (1 x 1) interface for the anne aled sample.