X-RAY STUDY OF THE AG SI(III) INTERFACE

Citation
Rd. Aburano et al., X-RAY STUDY OF THE AG SI(III) INTERFACE, Surface science, 339(1-2), 1995, pp. 891-896
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
339
Issue
1-2
Year of publication
1995
Pages
891 - 896
Database
ISI
SICI code
0039-6028(1995)339:1-2<891:XSOTAS>2.0.ZU;2-1
Abstract
X-ray diffraction was employed to study the structure of the Ag/Si(111 ) interface. Samples were prepared by vacuum deposition of Ag onto Si( 111)-(7 x 7) followed by either annealing to 400 degrees C or no annea l. The annealed and unannealed samples show significantly different Si -substrate truncation-rod intensity profiles. The results are explaine d in terms of structural features of the (7 x 7) reconstruction for th e unannealed sample and a fairly abrupt (1 x 1) interface for the anne aled sample.