Surface damage on Ge(100) due to single 20 keV Ga+ ion impacts was inv
estigated by in situ scanning tunneling microscopy (STM). Two types of
damage structures were observed: the first appears as small disruptio
ns of the surface on the scale of 1X1 nm(2), while the second consists
of large craters on the scale of 85 nm(2). The small damage features
are produced by a large fraction of the ions, but only similar to 10(-
3) ions produce craters.