ELECTRON QUANTUM WIRES IN TYPE-II SINGLE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES

The existence of electronic quantum wires in the center of homogeneous ly doped single type II heterojunctions in V grooves is predicted. No additional structural confinement is needed. The valence and conductio n band edges in such structures are calculated by solving the 2D-Poiss on and 2D-Schrodinger equations self-consistently. As a prototype syst em we consider a realistic n-InP/n-InALAs heterostructure in a V groov e along [01 ($) over bar 1] with a finite curvature. The band bending is found to depend on the position along the heterojunction, inducing two-dimensionally confined bound states for electrons which can serve as 1D conducting channels. Using proper doping conditions a ground sta te below the Ferni energy can be achieved. The subband separation is s trongly dependent on the radius of curvature of the groove center and amounts to about 15 meV. (C) 1995 American Institute of Physics.