EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

Two different kinds of n-type GaN films were prepared by organometalli c vapor phase epitaxy, one by using trimethylgallium (TMGa) and anothe r by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteris tics were fabricated. Deep-level transient spectroscopy studies were p erformed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one lev el, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.