EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/

Authors
CORRADETTI A LEONI R CARLUCCIO R FORTUNATO G REITA C PLAIS F PRIBAT D
Citation
A. Corradetti et al., EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/, Applied physics letters, 67(12), 1995, pp. 1730-1732
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
12
Year of publication
1995
Pages
1730 - 1732
Database
ISI
SICI code
0003-6951(1995)67:12<1730:EOCNFA>2.0.ZU;2-T
Abstract
A systematic study of the noise performances of polycrystalline silico n thin him transistors is presented. The drain current spectral densit y of these devices shows an evident 1/ f behavior and scales, when ope rating in the Linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier numb er fluctuations related to the dynamic trapping and detrapping of the oxide traps. (C) 1995 American Institute of Physics.