VISIBLE ELECTROLUMINESCENCE FROM A NOVEL BETA-SIC P-SI N-P HETEROJUNCTION DIODE PREPARED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION/

A novel structure of beta-SiC/p-Si has been reported to emit visible e lectroluminescence (EL). The beta-SiC is grown directly on a Si substr ate by rapid thermal chemical vapor deposition (RTCVD) technology. The mechanism of EL emission is shown as a porous silicon (PS) layer. The PS is formed unintentionally at beta-SiC/p-Si interface owing to a la rge lattice mismatch (20%) between beta-SiC and Si substrates. In addi tion, the heterojunction diode exhibits excellent rectifying behavior. The ideality factor n and rectification ratio at 1.0 V are 1.8 and 34 0, respectively. (C) 1995 American Institute of Physics.