LUMINESCENCE PROPERTIES OF NITROGEN ION-IMPLANTED ZNSE AFTER THERMAL ANNEALING

Nitrogen atoms were implanted into ZnSe layers which were grown by met alorganic chemical vapor deposition. The implanted crystals were therm ally annealed in a nitrogen atmosphere. Photoluminescence spectra show an acceptor-bound excitonic emission line (I-1) and donor-to-acceptor pair (DAP) recombination emission, which reveal the activation of nit rogen atoms as shallow accepters. An additional DAP emission was obser ved at 462 nm, which is often seen for ZnSe:N grown by molecular beam epitaxy. The selenium vacancy generation accelerates the occupation of nitrogen atoms at the selenium sites and the excess vacancy generatio n brings about the formation of deep donor complexes. (C) 1995 America n Institute of Physics.