NUCLEATION AND GROWTH OF B-AXIS ORIENTED PRBA2CU3O7-X THIN-FILMS ON LASRGAO4(100) SUBSTRATES

Authors
Citation
Gy. Sung et Jd. Suh, NUCLEATION AND GROWTH OF B-AXIS ORIENTED PRBA2CU3O7-X THIN-FILMS ON LASRGAO4(100) SUBSTRATES, ETRI journal, 18(4), 1997, pp. 339-346
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
ISSN journal
12256463
Volume
18
Issue
4
Year of publication
1997
Pages
339 - 346
Database
ISI
SICI code
1225-6463(1997)18:4<339:NAGOBO>2.0.ZU;2-D
Abstract
Good quality a-axis oriented thin films of YBa2Cu3O7-x may be grown by the use of a PrBa2Cu3O7-x (PBCO) layer as a template. Here we present a detailed study of the nucleation of the PBCO layer, explaining the orientations observed. It is determined that the wavy surface of a LaS rGaO4 (LSGO) (100) substrate consists of the {101} planes by observing cross-sectional transmission electron microscopy images of the interf ace between the PBCO film and the substrate. The images and selected a rea diffraction patterns show that a mixed c- and b-axis oriented PBCO layer was initially grown on the substrate, followed by pure b-axis o riented PBCO growth. We explain that the c-axis oriented growth is the result of the growth of the PBCO (019) planes on the LSGO (101) plane s. We conclude that the nucleation and growth of the PBCO films at the initial stages depends on the crystallographic plane of the substrate surfaces, however, as the fi Im grows further, the kinetics of the de position process favors b-axis oriented growth.