CALCULATION OF TEMPERATURE-DEPENDENT THRESHOLD CURRENT-DENSITY OF ZNCDSE ZNSE QUANTUM-WELL LASER INCLUDING MANY-BODY EFFECTS/

Citation
A. Bandyopadhyay et Pk. Basu, CALCULATION OF TEMPERATURE-DEPENDENT THRESHOLD CURRENT-DENSITY OF ZNCDSE ZNSE QUANTUM-WELL LASER INCLUDING MANY-BODY EFFECTS/, Applied physics letters, 70(5), 1997, pp. 553-555
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
5
Year of publication
1997
Pages
553 - 555
Database
ISI
SICI code
0003-6951(1997)70:5<553:COTTCO>2.0.ZU;2-T
Abstract
We have calculated the threshold current density of the ZnCdSe/ZnSe qu antum well laser as a function of temperature by incorporating many bo dy Coulomb interactions, both the heavy- and light hole subbands, as w ell as the temperature and energy dependencies of linewidth for laser transition. The effect of finite well width and well depth in the Coul omb interaction is also considered instead of taking strictly two-dime nsional Coulomb potential. The calculated values of nominal threshold current density are 1.5 times larger than the values calculated withou t considering Coulomb interaction, whereas calculations using strictly two-dimensional Coulomb potential show 7% overestimation, Good agreem ent is obtained between the reported experimental results and the theo retical threshold current densities for a Zn0.83Cd0.17Se/ZnSe multiple quantum well laser assuming a value of 0.8 for the internal quantum e fficiency. (C) 1997 American Institute of Physics.