TUNABLE NEGATIVE DIFFERENTIAL RESISTANCE IN ANTI-DOT DIFFRACTION FIELD-EFFECT TRANSISTOR

Quantum diffraction of two-dimensional electrons by a periodic array o f nanoscale quantum antidots is considered in the channel of a high mo bility field effect transistor. A charge control model within a self-c onsistent analysis shows that the current characteristics of the new a nti-dot diffraction field effect transistor exhibits tunable negative differential resistance and hysteresises which could persist above nit rogen temperature. (C) 1997 American Institute of Physics.