SEMICONDUCTOR-METAL TRANSITION AND THE ONSET OF ITINERANT FERROMAGNETISM IN THE HEUSLER PHASES TICOSN-TICOSB

Citation
Ma. Kouacou et al., SEMICONDUCTOR-METAL TRANSITION AND THE ONSET OF ITINERANT FERROMAGNETISM IN THE HEUSLER PHASES TICOSN-TICOSB, Journal of physics. Condensed matter, 7(37), 1995, pp. 7373-7385
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
7
Issue
37
Year of publication
1995
Pages
7373 - 7385
Database
ISI
SICI code
0953-8984(1995)7:37<7373:STATOO>2.0.ZU;2-X
Abstract
The magnetic and transport properties of the TiCoSnxSb1-x solid soluti ons with the cubic MgAgAs structure have been studied, and show the on set of ferromagnetism associated with a semiconductor to metal transit ion, keeping the same 3d elements and varying the number of s-p electr ons. The transition from TiCoSn ferromagnetic metal to the non-magneti c semiconductor TiCoSb occurs through an intermediate metallic Pauli-l ike state. The variations of the Curie temperature as a function of sa turation and effective paramagnetic moments are related to the itinera nt ferromagnetism model. A comparison is made with the TiCoxNi1-xSn se ries, where the transition occurs directly from ferromagnetic metal to semiconducting state.