Ma. Kouacou et al., SEMICONDUCTOR-METAL TRANSITION AND THE ONSET OF ITINERANT FERROMAGNETISM IN THE HEUSLER PHASES TICOSN-TICOSB, Journal of physics. Condensed matter, 7(37), 1995, pp. 7373-7385
The magnetic and transport properties of the TiCoSnxSb1-x solid soluti
ons with the cubic MgAgAs structure have been studied, and show the on
set of ferromagnetism associated with a semiconductor to metal transit
ion, keeping the same 3d elements and varying the number of s-p electr
ons. The transition from TiCoSn ferromagnetic metal to the non-magneti
c semiconductor TiCoSb occurs through an intermediate metallic Pauli-l
ike state. The variations of the Curie temperature as a function of sa
turation and effective paramagnetic moments are related to the itinera
nt ferromagnetism model. A comparison is made with the TiCoxNi1-xSn se
ries, where the transition occurs directly from ferromagnetic metal to
semiconducting state.