TXRF WITH SYNCHROTRON-RADIATION ANALYSIS OF NI ON SI-WAFER SURFACES

Authors
WOBRAUSCHEK P KREGSAMER P LADISICH W STRELI C PAHLKE S FABRY L GARBE S HALLER M KNOCHEL A RADTKE M
Citation
P. Wobrauschek et al., TXRF WITH SYNCHROTRON-RADIATION ANALYSIS OF NI ON SI-WAFER SURFACES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 363(3), 1995, pp. 619-620
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
363
Issue
3
Year of publication
1995
Pages
619 - 620
Database
ISI
SICI code
0168-9002(1995)363:3<619:TWSAON>2.0.ZU;2-U
Abstract
SR-TXRF (Synchrotron Radiation excited Total Reflection X-ray Fluoresc ence Analysis) with monoenergetic radiation produced by a W/C multilay er monochromator has been applied to the analysis of Ni on a Si-wafer surface. An intentionally contaminated wafer with 100 pg has been used to determine the detection limits. 13 fg have been achieved for Ni at a beam current of 73 mA and extrapolated to 1000 s, This technique si mulates the sample preparation technique of Vapour Phase Decomposition (VPD) on a wafer surface.