MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR

A calculation model to study atomic layer deposition (ALD) in low-pres sure channel-type CVD reactor with many parallel substrates is describ ed. The calculations are based on continuity equation and kinetic equa tion for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studie d. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the stead y-state adsorption wave is analyzed.