SIMULATION OF CHEMICAL-VAPOR-DEPOSITION OF SIC FROM METHYLTRICHLOROSILANE IN A HOT-WALL REACTOR

A two-dimensional simulation for the deposition of SiC from gas mixtur es containing MTS-H-2-HCl-Ar was set up on the basis of the commercial CFD-code PHOENICS (1.6.6). Previously measured rate equations [1] tha t describe the deposition reaction were implemented. Allowing depositi on on all surfaces in the reactor the model takes into account the inf luence of local depletion of MTS and enrichment of HCl during depositi on also upstream of the substrate. In the range from 800 to 1400 degre es C the calculated total mass increase rates on the substrate as a fu nction of temperature, partial pressure and flow rate show good agreem ent with experiments. The simulation model was then used to calculate local deposition rates with the aim of finding suitable conditions to produce uniform layer thickness.