SIMULATION OF EPITAXIAL SILICON CHEMICAL-VAPOR-DEPOSITION IN BARREL REACTORS

The epitaxial silicon chemical vapor deposition by SiCl4/H-2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i.e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions (i.e., flow rates and reacto r pressure) have been examined. The simulation have been satisfactoril y compared with experimental growth rate data measured along the react or axial coordinate.