REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION

Authors
SIIMON H AARIK J
Citation
H. Siimon et J. Aarik, REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION, Journal de physique. IV, 5(C5), 1995, pp. 277-282
Citations number
12
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
5
Issue
C5
Year of publication
1995
Pages
277 - 282
Database
ISI
SICI code
1155-4339(1995)5:C5<277:ROTAHA>2.0.ZU;2-X
Abstract
Model calculations and time dependence of the deposit mass recorded by quartz crystal microbalance during atomic layer growth of tantalum ox ide are used to determine sticking coefficients of TaCl5 and H2O, and diffusion coefficient of TaCl5 in N-2. It is shown that the reactivity of TaCl5 towards H2O-treated tantalum oxide surface is remarkably hig her than the reactivity of H2O towards TaCl5-treated tantalum oxide.