NICKEL THIN-FILMS GROWN BY MOCVD USING NI(DMG)(2) AS PRECURSOR

The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO)(4), (ii) optimization of the parameters for Ni film growt h, and (iii) characterization of the film morphology. The thermal beha viour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)(2)], b is(2,2,6,6-tetramethyl-3,5-heptandionat [Ni(thd)(2)], N,N'-ethylenebis (2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-e n-4-onalo)Ni(II), [Ni(apo)(2)] were investigated in a model reactor. F urthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(dmg)(2) as precursor. The deposition was carried out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by p rofilometry, X-ray diffraction, atomic force microscopy (AFM), four-po int resistivity measurements and electron spectroscopy for chemical an alysis (ESCA). Comparison of the AFM and ESCA data with the electrical resistances resulted in a two layer film model.