L. Poirier et F. Teyssandier, VANADIUM OXI-CARBIDE COATINGS DEPOSITED BY OMCVD IN AN ISOTHERMAL REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 473-480
This paper reports on the influence of both the vaporization mechanism
and gaseous transport phenomena, on the properties of vanadium oxi-ca
rbide coatings. In order to study the influence of the residence time
of the gaseous mixture on the properties of the deposited layer, a spe
cific device has been built. In this device the temperature of the rea
ctor wall is very accurately controlled to the vaporization temperatur
e of the precursor by a heat pipe disposed inside a furnace, whereas t
he temperature of the substrate is imposed independently. A vacuum-tig
ht sliding device allowed varying the length between the vaporization
crucible and the deposition substrate. A complete factorial design wit
h three factors and two levels, was carried out for two characteristic
vaporization temperatures of the precursor. We studied the influence
of three parameters on the thickness and composition of the deposits:
the substrate temperature, the hydrogen flow rate, and the distance be
tween the vaporization crucible and the steel substrate.