CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET(2))(4) AS PRECURSOR

By using tetrakis(diethylamido) zirconium [Zr(NEt(2))(4)]. excellent q uality ZrO2 thin films were deposited with high growth rates on alumin a and glass substrates by chemical vapor deposition. The depositions w ere carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580 degrees C and in the presence of oxygen. The as-grown films are colourless. smooth and well-adherent to the su bstrates. SIMS analysis evidenced pure ZrO2 with a slight superficial contamination of hydrocarbons and nitrogen The films have a tapered po lycrystalline columnar structure well risible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the majo r phase together with a small variable amount of tetragonal zirconia U nder 550 degrees C the as-grown films resulted highly textured and wer e dominated by the (020) orientation. The films were annealed in the r ange 600-1000 degrees C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.