FORMATION OF INTERFACES AND TEMPLATES IN THE SI(111)-CR SYSTEM

The literature data and new data on investigation of the Si(111)-Cr sy stem were systematized to the diagram of structural phase transitions. The ranges on this diagram give the formation conditions of various p hases and reflect the mechanism of the Cr/Si(111) and CrSi2/Si(111) in terface formation during room-temperature Cr deposition following anne aling. The proofs of the multilayer surface phase formation and the da ta about transitions between the multilayer surface phases and bulk si licides during formation of the Cr/Si(111) and CrSi2/Si(111) interface s were presented. The investigation of A- and B-type CrSi2 templates f ormation was carried out. It was discovered that nucleation conditions and, in particular, the type of surface phases determine the azimutha l orientation of the epitaxial CrSi2 islands relative to Si(111) under their nucleation. The A- and B-type CrSi2 epitaxial films were grown by means of the template technique. The A-type CrSi2 semiconductor fil m with low concentration and high mobility of holes was obtained.