Dead time corrections in particle counting systems are important for q
uantitative analysis. It is often not appreciated, however, that these
corrections depend on the experiment performed. For surface analysis
systems using a stationary beam and a steady counting rate from a spec
trometer with single particle detecting electronics, the dead time cor
rections lead to the simple equations discussed in our earlier work. T
hese concepts translate very directly into SIMS and AES systems with r
astered beams and SIMS, XPS and AES systems with multidetectors, to us
e the same equations, but with area average and multidetector dead tim
es, respectively. The relations of these dead times to the original el
ectronic dead time are presented here.