SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
WANG CJ WU JW CHAN SH CHANG CY SZE SM FENG MS
Citation
Cj. Wang et al., SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 34(9A), 1995, pp. 1107-1109
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
9A
Year of publication
1995
Pages
1107 - 1109
Database
ISI
SICI code
Abstract
Silicon delta doping in GaInP material has been demonstrated by low-pr essure metalorganic chemical vapor deposition (LP-MOCVD) and character ized by Hall-effect and capacitance-voltage (C-V) measurements. The mo bility enhancement of delta-doped samples over their corresponding uni formly doped samples was observed. High sheet carrier density of N-S=1 .21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution pr ofile with the full width at half maximum of 25 Angstrom has been achi eved.