IMPROVEMENT IN THE CRYSTALLINE QUALITY OF ZNSE(111) FILMS GROWN BY MOLECULAR-BEAM EPITAXY USING MISORIENTED GAAS(111)A SUBSTRATES

Authors
MATSUMURA N MAEMURA K MORI T SARAIE J
Citation
N. Matsumura et al., IMPROVEMENT IN THE CRYSTALLINE QUALITY OF ZNSE(111) FILMS GROWN BY MOLECULAR-BEAM EPITAXY USING MISORIENTED GAAS(111)A SUBSTRATES, JPN J A P 2, 34(9A), 1995, pp. 1114-1116
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
9A
Year of publication
1995
Pages
1114 - 1116
Database
ISI
SICI code
Abstract
The crystalline quality of ZnSe(111) epilayers grown by molecular beam epitaxy can be improved using misoriented GaAs(111)A substrates. The epilayers grown on just-oriented GaAs(111)A substrates showed twinning , hazy surface morphology and weak photoluminescence spectra where dee p-level emission dominates. Twin-free ZnSe(111) epilayers with mirrorl ike surface morphologies and strong exciton emission were obtained on the GaAs(111)A substrates 10 degrees-misoriented toward [100] directio n.