A new process for fabricating small junctions from a full-wafer juncti
on sandwich has been developed, in which a dry-etching technique is us
ed for selectively etching an SiO2 insulating layer deposited on a jun
ction. Using this new process and a de ep-uv photolithography technolo
gy, we fabricated NbCxN1-x/MgO/NbCxN1-x junctions with dimensions of 0
.8x1.1 mu m(2).