NEW FABRICATION PROCESS FOR SMALL JUNCTIONS USING A SELECTIVE ETCH-BACK TECHNIQUE

Authors
KODAIRA S SHOJI A KOHJIRO S KIRYU S
Citation
S. Kodaira et al., NEW FABRICATION PROCESS FOR SMALL JUNCTIONS USING A SELECTIVE ETCH-BACK TECHNIQUE, JPN J A P 2, 34(9A), 1995, pp. 1127-1129
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
9A
Year of publication
1995
Pages
1127 - 1129
Database
ISI
SICI code
Abstract
A new process for fabricating small junctions from a full-wafer juncti on sandwich has been developed, in which a dry-etching technique is us ed for selectively etching an SiO2 insulating layer deposited on a jun ction. Using this new process and a de ep-uv photolithography technolo gy, we fabricated NbCxN1-x/MgO/NbCxN1-x junctions with dimensions of 0 .8x1.1 mu m(2).