Ion implantation of large doses (> 10(15)/cm(2)) or Al into SIC is kno
wn to produce excessive damage which cannot be readily eliminated by t
hermal annealing. We have demonstrated electrical activation of ion-im
planted Al in 6H-SiC, using a relatively low total ion dose (2.9 x 10(
14)/cm(2)) implanted at three energies (65, 135, and 220 keV) into a 2
mu m epitaxial layer with a background p-type doping level of 1 x 10(
18)/cm(3). The implanted samples were annealed at temperatures from 13
00 to 1500 degrees C using a proximity annealing method to retard the
decomposition of the SiC surface at high temperatures. Upon annealing
at 1450 degrees C the sheet resistance of the implanted layer was redu
ced by approximately a factor of four relative to the same p-type laye
r which was not implanted.