S. Virtanen et al., ARTIFICIAL CR-OXIDE AND FE-OXIDE PASSIVE LAYERS PREPARED BY SPUTTER-DEPOSITION, Journal of the Electrochemical Society, 142(9), 1995, pp. 3067-3072
The electrochemical behavior of synthetic Cr- and FE-oxide films with
well known chemical composition and structure, prepared by sputter dep
osition, has been studied. Photoelectrochemistry and Mott-Schottky ana
lysis show that the parameters during the sputter deposition process i
nfluence the stoichiometry of Cr- and Fe-oxides. The bandgap energy of
Cr-oxides is independent of the solution pH, thus the values of the b
andgap energy lower than those found for ideal Cr2O3 are due mainly to
nonstoichiometry. The defect structure influences the electrochemical
reactivity of the Cr-oxide. The photocurrent behavior of Fe3+-oxides
is strongly determined by the presence of Fe2+ in the oxide, which can
be introduced by a partial electrochemical reduction of the Fe-oxides
. Chloride ions did not show an effect on the electrochemical reactivi
ty of stoichiometric Fe2O3. Mott-Schottky analysis shows changes in th
e capacitance behavior if chloride is added to the solution; this sugg
ests that a specific adsorption of chloride takes place on the surface
. A comparison of the stability of the synthetic oxides and natural pa
ssive films may lead to new insights into the role of stoichiometry an
d defects on the breakdown of passive films.