ARTIFICIAL CR-OXIDE AND FE-OXIDE PASSIVE LAYERS PREPARED BY SPUTTER-DEPOSITION

Citation
S. Virtanen et al., ARTIFICIAL CR-OXIDE AND FE-OXIDE PASSIVE LAYERS PREPARED BY SPUTTER-DEPOSITION, Journal of the Electrochemical Society, 142(9), 1995, pp. 3067-3072
Citations number
21
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
142
Issue
9
Year of publication
1995
Pages
3067 - 3072
Database
ISI
SICI code
0013-4651(1995)142:9<3067:ACAFPL>2.0.ZU;2-Z
Abstract
The electrochemical behavior of synthetic Cr- and FE-oxide films with well known chemical composition and structure, prepared by sputter dep osition, has been studied. Photoelectrochemistry and Mott-Schottky ana lysis show that the parameters during the sputter deposition process i nfluence the stoichiometry of Cr- and Fe-oxides. The bandgap energy of Cr-oxides is independent of the solution pH, thus the values of the b andgap energy lower than those found for ideal Cr2O3 are due mainly to nonstoichiometry. The defect structure influences the electrochemical reactivity of the Cr-oxide. The photocurrent behavior of Fe3+-oxides is strongly determined by the presence of Fe2+ in the oxide, which can be introduced by a partial electrochemical reduction of the Fe-oxides . Chloride ions did not show an effect on the electrochemical reactivi ty of stoichiometric Fe2O3. Mott-Schottky analysis shows changes in th e capacitance behavior if chloride is added to the solution; this sugg ests that a specific adsorption of chloride takes place on the surface . A comparison of the stability of the synthetic oxides and natural pa ssive films may lead to new insights into the role of stoichiometry an d defects on the breakdown of passive films.