Sh. Lin et al., ELECTRON-SPIN-RESONANCE IN MICROCRYSTALLINE CUBIC BORON-NITRIDE AMORPHOUS HYDROGENATED BORON-NITRIDE MIXED-PHASE THIN-FILMS, Solid state communications, 96(6), 1995, pp. 421-425
Electron spin resonance and transmission electron microscopy results a
re reported that confirm the presence of a microcrystalline as well as
an amorphous phase in thin boron nitride films grown by plasma assist
ed chemical vapor deposition. Line broadening effects in hydrogenated
and deuterated samples indicate that a broad central line can be assoc
iated with dangling bonds in the amorphous phase, whereas a four-line
spectrum and a ten-line spectrum can be associated with paramagnetic b
oron defect centers located in the microcrystalline phase. The danglin
g bond concentration is ten times the concentration of the one-boron d
efects. The hyperfine coupling constant for the one-boron center in th
e cubic microcrystalline regions is only 20% of the previously reporte
d value for a similar center in hexagonal boron nitride. The relative
concentrations of the dangling bonds, the one-boron centers and the th
ree-boron centers depend on the exact plasma conditions used to form t
he thin films.