ELECTRON-SPIN-RESONANCE IN MICROCRYSTALLINE CUBIC BORON-NITRIDE AMORPHOUS HYDROGENATED BORON-NITRIDE MIXED-PHASE THIN-FILMS

Citation
Sh. Lin et al., ELECTRON-SPIN-RESONANCE IN MICROCRYSTALLINE CUBIC BORON-NITRIDE AMORPHOUS HYDROGENATED BORON-NITRIDE MIXED-PHASE THIN-FILMS, Solid state communications, 96(6), 1995, pp. 421-425
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
96
Issue
6
Year of publication
1995
Pages
421 - 425
Database
ISI
SICI code
0038-1098(1995)96:6<421:EIMCBA>2.0.ZU;2-R
Abstract
Electron spin resonance and transmission electron microscopy results a re reported that confirm the presence of a microcrystalline as well as an amorphous phase in thin boron nitride films grown by plasma assist ed chemical vapor deposition. Line broadening effects in hydrogenated and deuterated samples indicate that a broad central line can be assoc iated with dangling bonds in the amorphous phase, whereas a four-line spectrum and a ten-line spectrum can be associated with paramagnetic b oron defect centers located in the microcrystalline phase. The danglin g bond concentration is ten times the concentration of the one-boron d efects. The hyperfine coupling constant for the one-boron center in th e cubic microcrystalline regions is only 20% of the previously reporte d value for a similar center in hexagonal boron nitride. The relative concentrations of the dangling bonds, the one-boron centers and the th ree-boron centers depend on the exact plasma conditions used to form t he thin films.