DIRECT BONDING BETWEEN INP AND RARE-EARTH IRON-GARNET GROWN ON GD3GA5O12 SUBSTRATE BY LIQUID-PHASE EPITAXY

Authors
YOKOI H MIZUMOTO T MARU K NAITO Y
Citation
H. Yokoi et al., DIRECT BONDING BETWEEN INP AND RARE-EARTH IRON-GARNET GROWN ON GD3GA5O12 SUBSTRATE BY LIQUID-PHASE EPITAXY, Electronics Letters, 31(18), 1995, pp. 1612-1613
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
18
Year of publication
1995
Pages
1612 - 1613
Database
ISI
SICI code
0013-5194(1995)31:18<1612:DBBIAR>2.0.ZU;2-#
Abstract
The bonding of InP and rare earth iron garnet grown on Gd3Ga5O12 subst rate without any additional material is demonstrated. After chemical t reatment, heat treatment in H-2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconducto r and magneto-optic devices.