FLOATING BASE THYRISTOR

The floating base thyristor (FBT) is a new thyristor structure in whic h its p-base region, containing a p(+) region, is not shorted to the n (+) emitter. Using the DMOS process, an n-channel and a p-channel MOSF ET are integrated with the thyristor structure. The device operates in the thyristor mode with a low ON-state voltage drop al even high curr ent densities when a positive bias is applied to both gates. When a ne gative bias is applied to the OFF gate, the device operates in the IGB T mode with the saturated current controlled by the positive bias appl ied to the ON gate.