A NEW 2-DIMENSIONAL SHORT-CHANNEL MODEL FOR THE DRAIN CURRENT-VOLTAGECHARACTERISTICS OF A FULLY DEPLETED SOI (SILICON-ON-INSULATOR) MOSFET

A new drain-current model applicable to submicrometer SOI MOSFETs is p resented. The analysis is carried out for a non-uniform doping distrib ution in silicon film and it takes into account the field dependence o f mobility of electrons in the conducting channel and the possible fri nging field effects near the drain and source ends. The present two-di mensional (2-D) model considers the short-channel effect on the deplet ion layer charge and hence on the static characteristics of the device . The results so obtained are verified with experimental data. The ana lysis is extended to find an expression for transconductance in terms of terminal voltages and device parameters. The cut-off frequency of t he present model lies in the microwave region; therefore, to the first -order approximation, the model could be suitable for very high freque ncy applications.