Stoichiometric Sr1-xBaxNb2O6 (SBN) powder and thin films were prepared
by a chemical method. The starting materials were niobium ethoxide an
d the hydroxides of strontium and barium. Powders were obtained by eva
poration of the precursor solution, and thin films were deposited by s
pin coating. Annealing temperature required to obtain complete convers
ion to the crystalline material was about 700 degrees C. Stoichiometri
c polycrystalline films of Sr1-xBaxNb2O6 were deposited on quartz and
silicon substrates, Leakage current-voltage and the capacitance-voltag
e measurements on a metal/SBN/n-silicon structure show a diode-type ch
aracteristic.