LAYERED SEMICONDUCTOR GES AS A BIREFRINGENT STRATIFIED MEDIUM

Citation
Ra. Suleymanov et al., LAYERED SEMICONDUCTOR GES AS A BIREFRINGENT STRATIFIED MEDIUM, Physical review. B, Condensed matter, 52(11), 1995, pp. 7806-7809
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
11
Year of publication
1995
Pages
7806 - 7809
Database
ISI
SICI code
0163-1829(1995)52:11<7806:LSGAAB>2.0.ZU;2-D
Abstract
Transmission and reflection spectra of GeS single crystals of differen t thicknesses have been measured in a wide spectral range. The interfe rence spectra have two periods in unpolarized light, one of which is t he usual Fabry-Perot type while the other is due to birefringence. It is also shown that the reflection coefficient in the transparent regio n depends on the crystal thickness and reaches the value of about 0.75 for thick crystals (similar to 800 mu m). The results obtained have b een analyzed by using the 4 x 4 matrix method for multilayer optical s ystems. It is shown that GeS can be considered as a natural birefringe nt stratified medium.