INTRABAND ABSORPTION IN SEMICONDUCTOR QUANTUM-WELLS IN THE PRESENCE OF A PERPENDICULAR MAGNETIC-FIELD

The intraband light absorption between conduction-band states in symme tric semiconductor quantum wells in the presence of a perpendicular ma gnetic field is discussed. By theoretical analysis three types of tran sitions are found: bound bound, bound free, and free free. Numerical c alculations are given for a rectangular GaAs quantum well in bulk AlxG a1-xAs. The absorption in this structure strongly depends on structure parameters (well thickness, mole fraction, and effective masses), and also on temperature and external magnetic field. Analysis and numeric al results such as those presented here may be important for the desig n of infrared detectors.