KINETIC PROCESSES IN METAL EPITAXY STUDIED WITH VARIABLE-TEMPERATURE STM - AG PT(111)/

Citation
H. Brune et al., KINETIC PROCESSES IN METAL EPITAXY STUDIED WITH VARIABLE-TEMPERATURE STM - AG PT(111)/, Thin solid films, 264(2), 1995, pp. 230-235
Citations number
33
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
264
Issue
2
Year of publication
1995
Pages
230 - 235
Database
ISI
SICI code
0040-6090(1995)264:2<230:KPIMES>2.0.ZU;2-F
Abstract
Variable-temperature scanning tunneling microscopy has been applied to study kinetic processes involved in epitaxial growth. This paper conc entrates on nucleation and aggregation of submonolayer Ag films on a P t(lll) surface. From island density versus temperature data, the activ ation barrier for Ag adatom diffusion as well as the stability of adso rbed Ag dimers are determined. From the adsorbed aggregate shapes conc lusions on Ag perimeter diffusion can be drawn. An anisotropy in edge diffusion leads to dendritic aggregates with the trigonal substrate sy mmetry. A crossover to randomly ramified fractals is observed upon low ering of the deposition flux.