NOVEL BROMINATED CARBOSILANE PRECURSORS FOR LOW-TEMPERATURE HETEROEPITAXY OF BETA-SIC AND THEIR COMPARISON WITH METHYLTRICHLOROSILANE

Authors
KUNSTMANN T ANGERER H KNECHT J VEPREK S MITZEL NW SCHMIDBAUR H
Citation
T. Kunstmann et al., NOVEL BROMINATED CARBOSILANE PRECURSORS FOR LOW-TEMPERATURE HETEROEPITAXY OF BETA-SIC AND THEIR COMPARISON WITH METHYLTRICHLOROSILANE, Chemistry of materials, 7(9), 1995, pp. 1675-1679
Citations number
29
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
7
Issue
9
Year of publication
1995
Pages
1675 - 1679
Database
ISI
SICI code
0897-4756(1995)7:9<1675:NBCPFL>2.0.ZU;2-I
Abstract
Novel organometallic precursors, 1,3-bis(monobromosilyl)propane, 1,2-b is(monobromosilyl)ethane, and methyltribromosilane, for low-temperatur e deposition of beta-SiC have been developed, and the kinetics and mec hanism of their decomposition investigated. On the basis of the result s, heteroepitaxial thin films of beta-SiC with very good structural qu ality have been deposited on (100) Si using methyltribromosilane and m ethyltrichlorosilane.