H. Gleskova et S. Wagner, ARE BOTH THERMAL AND LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS INA-SI-H DRIVEN BY ELECTRONS, Journal of non-crystalline solids, 190(1-2), 1995, pp. 157-162
Results of a search for a unifying rate law for the annealing of metas
table defects in hydrogenated amorphous silicon (a-Si:H) are reported.
The hypothesis that defect annealing by both heating or illumination
is driven by the density of free electrons was tested. This hypothesis
is formulated via the rate equation -dN/dt=An(1)/(alpha)Nf(T), where
N is the defect density, t is the time, A is a constant, n is the free
electron density and f(T) is a function of temperature derived from a
distribution of annealing energies. The model fits two sets of data,
with light-intensity and electrical conductivity as the independent va
riables, reasonably well, with 1/alpha ranging from 0.39 to 0.76, but
not the third set, where the temperature was varied.