TRANSITION FREQUENCY AND TEMPERATURE DEPENDENCES OF HOMOGENEOUS WIDTHOF ND3+ ION IN SILICATE GLASS

The homogeneous width of the F-4(3/2)(1) - I-4(9/2) transition of Nd3 ions which were doped into pure silicate glass was measured by accumu lated photon echoes between 1.6 and 44 K. The origin of the dephasing of the Nd3+ ions is attributed to the configurational changes peculiar to glass which are often modeled by the two-level systems (TLSs) and the Raman process with low-frequency vibrational modes of silicate gla ss. Besides the TLS dephasing process, the Raman process with low-freq uency modes has been found to be transition frequency dependent, and t he homogeneous width is larger on the higher transition frequency side . These increases in the homogeneous width are attributed to the incre ase in the elastic field interaction and the electron-phonon interacti on, respectively. The transition frequency dependence of the homogeneo us width can be explained by taking the positions of the host ions and the TLSs into account.