EPITAXIAL ELECTROOPTICAL SRXBA1-XNB2O6 FILMS BY SINGLE-SOURCE PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
ZHU LD ZHAO J WANG F NORRIS PE FOGARTY GD STEINER B LU P KEAR B KANG SB GALLOIS B SINCLAIR M DIMOS D CRONINGOLOMB M
Citation
Ld. Zhu et al., EPITAXIAL ELECTROOPTICAL SRXBA1-XNB2O6 FILMS BY SINGLE-SOURCE PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(13), 1995, pp. 1836-1838
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
13
Year of publication
1995
Pages
1836 - 1838
Database
ISI
SICI code
0003-6951(1995)67:13<1836:EESFBS>2.0.ZU;2-7
Abstract
SrxBa1-xNb2O6 films have been epitaxially grown on MgO substrates by a single-source plasma-enhanced chemical vapor deposition (PE-CVD). Exc eptionally high quality of the epitaxial films was observed as indicat ed by high-resolution synchrotron x-ray diffract ion imaging. The film s exhibit waveguiding behavior with values of refractive index and the linear electro-optic coefficient r(51) close to those of bulk crystal s. (C) 1995 American Institute of Physics.