RELATIONSHIP BETWEEN SELF-ORGANIZATION AND SIZE OF INAS ISLANDS ON INP(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using the strained-induced 2D-3D transition, InAs dots have been grown on InP(001) and examined by transmission electron microscopy, Two dif ferent modes of island size and spatial distribution have been identif ied. For deposit of 1.5 and 1.8 monolayers, the islands are about 7 nm high and randomly distributed. Above 2 monolayers, they are about fiv e times smaller in volume and locally self-organized, with a typical d istance of 40 nm independent of the island density. It is suggested th at the strong dependence of the island size on the total amount of dep osited InAs is mainly due to long range interactions through the subst rate. (C) 1995 American Institute of Physics.