SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Oriented diamond films were achieved on Si(001) and Si(111) substrates via hot filament chemical vapor deposition (HFCVD) with the orientati on relationship of dia[110]/Si[110] and dia(001)/Si(001) for Si(001), and of dia(1(1) over bar0$)/Si(1(1) over bar0$) and dia(111)/Si(111) f or Si(111). The substrates were negatively biased relative to the fila ment during the nucleation stage. The as-grown films were characterize d by scanning electron microscopy (SEM) and Raman spectroscopy. The ro le of negative bias is discussed in light of the differences between H FCVD and microwave plasma CVD. In conclusion, the importance of the el ectron emission from the diamond coating on the substrate holder is hi ghlighted, while the ion bombardment is eliminated as a main factor ba sed on our experiments. (C) 1995 American Institute of Physics.