InxGa1-xN single-crystal films were grown at 600-700 degrees C by atom
ic layer epitaxy (ALE). InGaN films with compositions of up to 27% ind
ium were achieved. The full width at half-maximum (FWHM) of the (0002)
InxGa1-xN peak by double crystal x-ray diffraction (DCXRD) was as sma
ll as 6 min, the lowest value reported for this ternary alloy. Strong
photoluminescence band edge emission between 360 and 446 nm was observ
ed at room temperature. These low temperature ALE grown films were ach
ieved without the need to use excessive flows of the In organometallic
source and thus demonstrate the potential for growth of this ternary
alloy over the entire composition range. (C) 1995 American Institute o
f Physics.