HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY

InxGa1-xN single-crystal films were grown at 600-700 degrees C by atom ic layer epitaxy (ALE). InGaN films with compositions of up to 27% ind ium were achieved. The full width at half-maximum (FWHM) of the (0002) InxGa1-xN peak by double crystal x-ray diffraction (DCXRD) was as sma ll as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observ ed at room temperature. These low temperature ALE grown films were ach ieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range. (C) 1995 American Institute o f Physics.