PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

Authors
LI W WANG ZG LIANG JB XU B ZHU ZP YUAN ZL LI JA
Citation
W. Li et al., PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX, Applied physics letters, 67(13), 1995, pp. 1874-1876
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
13
Year of publication
1995
Pages
1874 - 1876
Database
ISI
SICI code
0003-6951(1995)67:13<1874:PSOSSI>2.0.ZU;2-X
Abstract
Optical properties of single submonolayer InAs structures grown on GaA s (001) matrix are systematically investigated by means of photolumine scence acid time-resolved photoluminescence, It is shown that the form ation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in th e highly improved luminescence efficiency of the submonolayer InAs/GaA s structures. (C) 1995 American Institute of Physics.