H. Neff et al., EXTENDED FUNCTION OF A HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SI MEMBRANE, Applied physics letters, 67(13), 1995, pp. 1917-1919
The bolometric performance of a high-T-c transition edge bolometer has
been evaluated within the temperature range 80 K<T<300 K. The detecti
vity D of the device is peaking at transition midpoint and remains at
moderate levels up to room temperature. The bolometric time constant
of the device increases from 0.33 ms at transition midpoint to 1.55 ms
at ambient temperature. The noise pattern displays 1/f behavior at lo
w frequency and is scaling with bias current and the thermal resistanc
e coefficient beta of the superconducting film. (C) 1995 American Inst
itute of Physics.