EXTENDED FUNCTION OF A HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SI MEMBRANE

Citation
H. Neff et al., EXTENDED FUNCTION OF A HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SI MEMBRANE, Applied physics letters, 67(13), 1995, pp. 1917-1919
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
13
Year of publication
1995
Pages
1917 - 1919
Database
ISI
SICI code
0003-6951(1995)67:13<1917:EFOAHT>2.0.ZU;2-I
Abstract
The bolometric performance of a high-T-c transition edge bolometer has been evaluated within the temperature range 80 K<T<300 K. The detecti vity D of the device is peaking at transition midpoint and remains at moderate levels up to room temperature. The bolometric time constant of the device increases from 0.33 ms at transition midpoint to 1.55 ms at ambient temperature. The noise pattern displays 1/f behavior at lo w frequency and is scaling with bias current and the thermal resistanc e coefficient beta of the superconducting film. (C) 1995 American Inst itute of Physics.