ELECTROLUMINESCENCE AND AVALANCHE MULTIPLICATION AT ELECTRIC-FIELD STRENGTH EXCEEDING 1 MV CM IN HYDROGENATED AMORPHOUS SIC ALLOY/

High electric field effects in hydrogenated amorphous silicon carbide alloy have been investigated employing a double insulating ac-driven e lectroluminescent device structure. The carbon content was systematica lly varied by changing the deposition conditions. Hot-electron-induced electroluminescence and avalanche multiplication occurred at an elect ric field of 1.4-2.3 MV/cm in amorphous silicon carbide as in hydrogen ated amorphous silicon. From an analysis of the decay of the emission spectrum in terms of the lucky-drift model, the electron mean free pat h tends to be reduced with an increase in structural disorder due to c arbon alloying.